Epitaxy on surfaces vicinal to Si (001). I. Diffusion of silicon adatoms over the terraces -
C Roland, GH Gilmer - Physical Review B, 1992 - APS
... In this paper, we present results on the diffusion of silicon adatoms over the flat
Si ... have two dangling bonds costing about 1 eV apiece, move to- wards ...
… of near-interface defects in hydrogenated amorphous silicon-silicon nitride heterojunctions: The … -
WB Jackson, MD Moyer - Physical Review B, 1987 - APS
... The holes must move readily in the nitride, a re ... midgap or lower in the amorphous
silicon near enough ... trapping of the electrons can dominate over near-interface ...
?Brownian strings?: Segmenting images withstochastically deformable contours -
RP Grzeszczuk, DN Levin, SGC Syst, M View - Pattern Analysis and Machine Intelligence, IEEE Transactions …, 1997 - ieeexplore.ieee.org
... RP Grzeszczuk is with Silicon Graphics, Inc ... the global minimum of the energy function
over the state ... of local perturbations, selected by the move generator. ...
Anodic dissolution of silicon in hydrofluoric acid solutions -
R Memming, G Schwandt - Surface Science, 1966 - Elsevier
... applied across the inter face, holes move towards the ... that the overvoltage is completely
taken over by the space ANODIC DISSOLUTION OF SILICON 121 charge ...
Development of a Silicon-based Nanoprobe System for 3-D Measurements -
H Haitjema, WO Pril, PHJ Schellekens - CIRP Annals-Manufacturing Technology, 2001 - Elsevier
... Keywords: CMM-probe, silicon, MEMS ... Additionally, when the tip is not on the z-axis,
it will move over a small predictable distance in x- or y- direction when ...
Performance optimizations, implementation, and verification of theSGI Challenge multiprocessor -
M Galles, E Williams, SGC Syst, M View - System Sciences, 1994. Vol. I: Architecture, Proceedings of …, 1994 - ieeexplore.ieee.org
... 1 Introduction The Silicon Graphics Challenge line of symmetric ... 2 bus favors read
re- quests over other requests ... to be cleaned as they move between processor ...
[PS] Atomistic models of vacancy-mediated diffusion in silicon -
ST Dunham - Journal of Applied Physics, 1995 - dunham.ee.washington.edu
... Due to the silicon lattice structure, the vacancy must move ... primarily just exchange
places over and over, with no ... rate is how often vacancies move from third ...
-
The segregation and oxidation of silicon on Pt (111), OR: The question of the ?platinum oxide? -
HP Bonzel, AM Franken, G Pirug - Surface Science, 1981 - Elsevier
... 8] led to the dis covery that, for example, carbon, sulfur and silicon could readily ...
be viewed as a process where the Si atoms do not move over large dis tances ...
[BOOK] Regional Advantage: Culture and Competition in Silicon Valley and Route 128 -
AL Saxenian - 1994 - books.google.com
... the exodus of engineers from the technology region around Route 128 in Massachusetts
to its West Coast counterpart, Silicon Valley. Kalb's move reflected more ...
Selectivity for etching an oxide over a nitride -
US Patent 5,423,945, 1995 - freepatentsonline.com
... including ions, electrons, free radicals and excited neutrals, move toward the ... the
like to optimize the selectivity of silicon oxide over silicon nitride on a ...
Source: Google Scholar |